Table 1.
dNTP | Vmax, nM/min | Km, μM | Vmax/Km | finc |
---|---|---|---|---|
Incorporation opposite the first nondamaged T (substrate S-1; Fig. 1) | ||||
dGTP | 0.14 ± 0.0095 | 30 ± 0.80 | 0.0047 | 8.1 × 10−3 |
dATP | 1.0 ± 0.082 | 1.7 ± 0.50 | 0.58 | NA |
dTTP | 0.17 ± 0.018 | 47 ± 11 | 0.0036 | 6.2 × 10−3 |
dCTP | 0.11 ± 0.0043 | 31 ± 4.7 | 0.0035 | 6.0 × 10−3 |
Incorporation opposite the second nondamaged T (substrate S-2; Fig. 1) | ||||
dGTP | 0.070 ± 0.0036 | 61 ± 9.8 | 0.0011 | 1.4 × 10−3 |
dATP | 0.68 ± 0.042 | 0.89 ± 0.22 | 0.76 | NA |
dTTP | 0.087 ± 0.0036 | 31 ± 4.8 | 0.0028 | 3.7 × 10−3 |
dCTP | 0.10 ± 0.0059 | 20 ± 4.9 | 0.0050 | 6.6 × 10−3 |
Incorporation opposite the first damaged T (substrate S-3; Fig. 1) | ||||
dGTP | 0.19 ± 0.0095 | 56 ± 8.8 | 0.0034 | 5.2 × 10−3 |
dATP | 0.40 ± 0.082 | 0.62 ± 0.14 | 0.65 | NA |
dTTP | 0.14 ± 0.019 | 220 ± 67 | 0.00064 | 1.0 × 10−3 |
dCTP | 0.14 ± 0.0081 | 26 ± 5.9 | 0.0054 | 8.3 × 10−3 |
Incorporation opposite the second damaged T (substrate S-4; Fig. 1) | ||||
dGTP | 0.34 ± 0.0091 | 114 ± 12 | 0.0030 | 4.6 × 10−3 |
dATP | 0.47 ± 0.019 | 0.73 ± 0.11 | 0.65 | NA |
dTTP | 0.52 ± 0.056 | 1300 ± 290 | 0.00040 | 6.2 × 10−4 |
dCTP | 0.47 ± 0.013 | 170 ± 17 | 0.0028 | 4.3 × 10−3 |
NA, not applicable.