Fig. 3.

Temperature dependence of gating-current early component. (A) Early component recorded at 2.7°C (upper trace) and 18.5°C (lower trace). Pulses from –150 to 0 mV and subtracting pulses from 50 mV SHP to 200 mV; 100 averages at 0.5 μs per point and 200 kHz. (B) Plot of early component rate of decay as a function of the inverse of the absolute temperature in K (1/T) for pulses from –150to0mV(□) and from –100 to –200 mV (□). Data were fitted to exp–(E/kT), where E is the activation energy in meV, k = 0.086173857 meV/K, and T is the absolute temperature in K. E was 120 and 173 meV for negative and positive pulses, respectively.