Figure 1.

Yeast growth under Al treatment. A, Yeast strain EGY48 transformed with empty vector pGilda (control) was incubated in liquid SD/Gal-Raf/His medium (pH 4.0) containing a series of AlCl₃ levels. Cell densities (OD₆₀₀ values) were determined at 2-h intervals over a 24-h period. It was shown that 2 mm Al promoted cell growth at the beginning of growth. B, Comparison of growth between yeast cells expressing Ced-9, Bcl-2, PpBI-1, and the control cells incubated in liquid SD/Gal-Raf/His medium (pH 4.0) added serous doses of AlCl₃ for 24 h. Relative OD₆₀₀ measurements were calculated as the OD₆₀₀ of treated cells divided by that of untreated cells. The value of strains with no Al treatment was set at 100%. C, Comparison of growth among yeast strains either incubated in SD/Gal-Raf/His medium (pH 4.0) without Al (left) or in SD/Glu/His medium (pH 4.0) with 0.5 mm Al (right). Relative OD₆₀₀ measurements of the control cells (left) or those of strains without Al (right) were set at 100%.