Localization of the Vm determinants in the
CT domain of rat Cx43. WT and the Cx43 channels truncated at positions
S257stop and G242stop were expressed in Xenopus
laevis oocytes pairs. (A) Sample records
of nonjunctional and junctional currents
(I2) induced by the equal displacement of
membrane potentials in the two cells (V1 and
V2; steps of 40 s from −100 to 0 mV in
increments of 20 mV, returning to −100 mV for 40 s between each
step). The junctional currents (Ij) measured
in oocyte 2 after application of small Vj
pulses in oocyte 1 (+10 mV, 500 ms, 1 Hz). For WT (left) and S257stop
(center) junctions, Ij decreased on
depolarization, more rapidly and to progressively lower steady state
values as more positive potentials were achieved.
Ij recovered to its initial values on
returning to −100 mV. The mutation G242stop largely abolished the
dependence of junctional conductance (gj) on
Vm (right). (B)
Vm dependence of the time constant of
decrease in gj. The time course of
relaxations to Gjss was well fit by single
exponentials (Inset) with long time constants that were
shorter at more positive voltages. The smooth curve is derived from
calculations assuming a single Boltzmann model. (C)
Graphs of
Gjss/Vm
relations where Gjss is normalized to the
value at −100 mV. The smooth curves are derived from fits to the
square of a Boltzmann relation based on a model of two independent
gates in series, one in each hemichannel (except for WT-G242stop, for
which a single Boltzmann and gate were assumed). The parameters are
given in Table 1. The Gjss of WT
(○) and truncated S257stop (▴) junctions
decreased by ≈50% when Vm increased from
−100 to 0 mV. Gjss of truncated G242stop
junctions (■) was quite insensitive to
Vm. The
Gjss/Vm curve
of hybrid WT-G242stop junctions (●) was in
between those of the homotypic junctions of the component combinations,
suggesting that only the Vm gate of WT
hemichannels contributed to their Vm
dependence. Each point in B represents mean values
(±SEM) of six pairs.