Figure 5.

Simulations of the effects of g_GIRK on cell membrane properties. (Upper Left) A simplified equivalent circuit incorporating only GIRK and leakage conductances. The membrane capacitance (C_m) is 50 pF. The leakage conductance (g_leak, 55 pS/pF) is linear with a reversal potential of −12 mV (E_leak); g_GIRK is as described in the text. (Upper Right) Current–voltage relation for the simulated g_GIRK. The resting potential (−60 mV in the absence of GIRK activation) is simulated by an applied current of −132 pA in both panels. (Lower) Voltage changes in response to current injections (starting at 20 pA, 20 pA steps) with (Right) and without g_GIRK (Left).