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. 2007 Sep;130(3):257–268. doi: 10.1085/jgp.200609719

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Copyright © 2007, The Rockefeller University Press

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Figure 3. — Effect of Ts1 on gating currents. Superimposed gating current traces elicited by a test pulse to −150 mV (A), −100 mV (B), and 0 mV (C) in control conditions (blue line) and in the presence of 50 nM Ts1 (red line). (A, inset) Voltage protocol used to record the currents. (D) Charge–voltage (Q-V) relationships (normalized to the maximum charge in control conditions) in the presence of Ts1 (red circles) and in control conditions (blue triangles). Solid and dashed traces are the fits to the function in Eqs. 3 and 4, respectively (see Materials and Methods). See Table I for fitted parameters.