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. 2000 Mar 1;115(3):241–256. doi: 10.1085/jgp.115.3.241

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© 2000 The Rockefeller University Press

This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 4.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/4.0/).

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Channel properties of the r-InsP₃R-3 in symmetric 0 mM Mg²⁺ solutions ([Ca²⁺]_i = 80 nM) under a voltage ramp. (A) The applied voltage ramp used to obtain the current traces. (B) I-V relation obtained from a typical current trace using the voltage ramp. Dotted and dashed lines are the fitted closed and open channel I-V relations, respectively. The channel conductance was evaluated as the difference between the slopes of the two fitted lines. (C) Voltage dependence of P _o of the r-InsP₃R-3 channel. The P _o of the channel observed at various V_app during the voltage ramp was binned and averaged over 28 traces to generate the histogram. SEM of the P _o is also plotted. The horizontal bar indicates the voltage range −15 to 15 mV in which channel openings and closings were difficult to discern, so P _o was underestimated.