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. 2004 Mar;123(3):281–293. doi: 10.1085/jgp.200308986

Figure 10.

Figure 10.

The higher affinity site of IVM reduces hP2X4 receptor channel desensitization. (A) Number of opening per burst (left) and burst duration (right) induced by 0.3 μM ATP as a function of the critical time between bursts of channel activity in the absence (open circles) or presence of 0.3 μM IVM (full circles). (B) Perforated-patch whole-cell currents in response to 2-s application of 30 μM ATP in the absence (left) and presence (right) of 0.2 μM IVM. The cell was incubated for 30 min with 0.2 μM IVM before exposure to ATP. Holding potential −60 mV. Calibration bars, 150 pA (left) and 500 pA (right). (C) Average (±SEM) desensitization after 2-s exposure to 30 μM ATP in the absence (control) and presence of 0.2 μM IVM (n = 8). The statistical significance between the groups was determinate with unpaired Student's t test, where *** represent P < 0.001.