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. 1999 Jan 1;113(1):111–124. doi: 10.1085/jgp.113.1.111

Figure 7.

Figure 7

N-channel activity appears to gate with a characteristic P o at each voltage. The stability of P o at each test voltage was examined by constructing a histogram of P o excluding first and last shut times (P o-ex). The bin width was 0.05 P o units. Data for 10 single N-channel patches are included in the histogram. The total number of sweeps measured was 385 for +10 mV, 810 for +20 mV, 632 for +30 mV, and 715 for +40 mV.