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. 1997 Oct 1;110(4):403–413. doi: 10.1085/jgp.110.4.403

Table I.

Parameters of the Voltage Dependence of Fast Inactivation

Channel v1/2 * ah * n *
WT −47.5 ± 0.9  4.7 ± 0.4 10
1R2Q −52.6 ± 0.7 3.7 ± 0.2  3
1R2K −57.4 ± 0.9  4.4 ± 0.2  5
1K4Q −51.2 ± 1.2 4.3 ± 0.2  7
1K4R −51.2 ± 0.7  4.3 ± 0.4  3
2R2Q −55.6 ± 0.9 3.9 ± 0.7  3
2R2K −47.9 ± 2.7 4.3 ± 0.1  4
2K4Q −53.2 ± 1.6 4.1 ± 0.6  8
2K4R −48.6 ± 1.4  4.4 ± 0.1  4
3R2Q −56.0 ± 1.3 3.8 ± 0.4  5
3R2K −54.8 ± 1.5 5.5 ± 0.9  4
3R4Q −50.7 ± 1.0  4.7 ± 0.3  6
3R4K −51.7 ± 1.0  4.6 ± 0.2  4
4R2Q −48.1 ± 0.4 4.2 ± 0.1  3
4R2K −47.2 ± 1.5  4.8 ± 0.2  5
4R4Q −47.3 ± 1.7  5.0 ± 0.5  7
4R4K −40.5 ± 0.7  4.6 ± 0.3  3
1K4Q:2K4Q −54.8 ± 0.9 4.2 ± 0.4  8
3R4Q:4R4Q −64.9 ± 3.4 8.0 ± 0.5  7
*

v1/2 and ah are the half-maximal voltage and slope factor for fast inactivation as determined by least-squares fits of the data (n = number of separate determinations) to a two-state Boltzmann function as described in materials and methods.  

Values significantly different from WT, with a probability <0.05 resulting from random variation (based on Student's unpaired t test).