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. 2001 Sep 1;118(3):291–302. doi: 10.1085/jgp.118.3.291

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© 2001 The Rockefeller University Press

This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.rupress.org/terms). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 4.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/4.0/).

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Voltage dependence of Css IV-trapped sodium channels. Mean conductance-voltage relationships of Na_v1.2, R850C/Q, R850C-MTSET, R853C/Q, and R853C-MTSEA in the presence of 200 nM Css IV after a +50 mV, 1 ms–prepulse. The solid lines through the data are fits to a sum of two Boltzmann relationships. The voltage dependence of the positive component was fixed to the half activation and slope values obtained from fits of the control channels to a single Boltzmann as shown in Table . The voltage for half activation (V_1/2), slope factors (k), and the fraction of the total represented by the negative, toxin-shifted, component (A_neg) in these fits were the following: for Na_v1.2a, V_1/2 = −62.9 mV, k = 8.93 mV, A_neg = 0.13; for R850C, V_1/2 = −57.4 mV, k = 7.9 mV, A_neg = 0.77; for R850C MTSET, V_1/2 = −65.1 mV, k = 6.0 mV, A_neg = 0.64; for R850Q, V_1/2 = −62.6 mV, k = 10.88 mV, A_neg = 0.70; and for R853Q, V_1/2 = −67.0 mV, k = 6.80 mV, A_neg = 0.76.