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. 2004 Aug;124(2):185–197. doi: 10.1085/jgp.200308950

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Copyright © 2004, The Rockefeller University Press

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Figure 3. — The D292N mutation reduces the coupling between voltage sensor movement and pore opening. (A and B) Current recordings from inside-out patches expressing hSlo-D292N and hSlo. The currents were elicited by a voltage pulse to 50 mV, from an HP of −50 mV, and the linear component of the current was subtracted off-line (subtracting pulse was to −150 mV from −100 mV). (B) The traces of both hSlo and hSlo-D292N superimposed and normalized to the size of the gating current. The inset (C) shows the ON gating current from B on an enlarged scale. Note that, in proportion, a similar charge displacement elicits a much smaller ionic current in hSlo-D292N than in hSlo. Recordings performed in 110 mM NMG-MES, 10 mM KMES, and 1.5 μM free Ca²⁺.