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. 2004 Aug;124(2):185–197. doi: 10.1085/jgp.200308950

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Copyright © 2004, The Rockefeller University Press

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Figure 6. — Reduction of the charge movement slow component in the hSlo-D292N channel. OFF gating currents in hSlo (A) and hSlo-D292N (B) elicited by voltage pulses from HP −50 mV to 150 mV of increasing durations, ranging from 40 μs to 10.2 ms. (C and D) OFF charge from two experiments as in A and B plotted as a function of the pulse duration. Data were normalized to the charge displaced by the 5.1-ms pulse and fitted to a bi-exponential function with a single fast (40 μs) and slow (1.1 ms) time constant. The charge movement slow component was reduced from 55% in hSlo to 26% in hSlo-D292N. Gating current recordings in 120 mM TEAMES and 1.5 μM free Ca²⁺.