. Author manuscript; available in PMC: 2008 Apr 24.

Published in final edited form as: Thin Solid Films. 2007 Nov 1;516(1):34–41. doi: 10.1016/j.tsf.2007.04.050

Table I.

Deposition conditions of the a-SiC_x:H films and selected characterization results

Deposition ID SiH₄ -CH₄ -H₂ -T_s	Substrate temperature T_s	[H₂] sccm	Precusor ratio	Hydrogen Dilution	Si-C relative bond density ratio	Deposition rate (nm/min)	Refractive Index (η) at 500 nm
2–10–5–275	275°C	5	0.17	0.36	1.00	6.8	1.90
2–10–80–275		80		5.71	1.28	3.2	2.58
2–10–180–275		180		12.85	2.54	2.5	2.79

2–10–5–200	200°C	5	0.17	0.36	0.51	7.4	1.79
2–10–20–200		20		1.42	0.77	6.6	1.82
2–10–80–200		80		5.71	1.02	3.2	2.32
2–10–180–200		180		12.85	1.97	2.6	2.72

2–10–180–150	150°C	180	0.17	12.85	1.34	2.9	2.44

4–10–5–275	275°C	5	0.29	0.36	0.77	8.9	1.96
4–10–80–275		80		5.71	0.92	4.6	2.83

4–10–5–200	200°C	5	0.29	0.36	0.50	7.0	1.88
4–10–80–200		80		5.71	0.79	4.4	2.47

4–10–180–150	150°C	180	0.29	12.85	0.95	2.8	2.62