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. 2008 Aug;132(2):251–263. doi: 10.1085/jgp.200809995

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© 2008 Campos et al.

This article is distributed under the terms of an Attribution–Noncommercial–Share Alike–No Mirror Sites license for the first six months after the publication date (see http://www.jgp.org/misc/terms.shtml). After six months it is available under a Creative Commons License (Attribution–Noncommercial–Share Alike 3.0 Unported license, as described at http://creativecommons.org/licenses/by-nc-sa/3.0/).

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Figure 3. — Effects of Ts3 on Nav 1.4 sodium channel gating currents. (A) Superimposed representative gating currents obtained in control conditions. Holding potential was −80 mV. ON gating currents were recorded with 40-ms pulses varying from −150 to +40 mV following a 100-ms prepulse to −120 mV. OFF gating currents were recorded with 40-ms pulses to −120 mV, preceded by pulses varying from −150 to +40 mV. (B) Superimposed representative gating currents obtained after the treatment with 200 nM of Ts3, by applying the protocol described in A. Experiments were performed at 14°C. (C) Comparison of traces of the ON gating currents obtained at −40 mV (gray lines) before and after the treatment with Ts3. Solid lines show the best fits obtained with function 1. (D) Comparison of traces of the OFF gating currents obtained at −120 mV after a pulse to −40 mV (gray lines) before and after the treatment with Ts3. Solid lines show the best fits obtained with function 1.