Figure 7.
Comparison of the rate of LFN translocation through reduced and oxidized S312C channels. (A) Reduced channels: S312C channels incorporated into the bilayer under reducing conditions (cis 250 μM TCEP) are exposed to cis LFN (7.2 nM); this leads to block of 95% of the conductance. Free LFN is then washed out of the cis compartment during the break in the record (250 s), and the pH is adjusted to 5.6 (cis5.6/trans6.6) while holding at +1 mV to prevent LFN from going through the channel. Translocation of LFN to the trans compartment is initiated by pulsing to +20 mV, and its rate is determined by following the rise in membrane conductance. (B) Same procedure as in A, except channels were oxidized before LFN addition as described in Fig. 6. The increased noise is a reflection of the marked decrease in conductance after oxidation and the increased gain. The current at 1 mV seen after the break in the record (270 s) reflects a small degree of unblocking of LFN occurring during the break. LFN translocation through oxidized channels at +20 mV proceeds much more slowly than through reduced channels. (The instantaneous current seen in pulsing from +1 mV at +20 mV is nearly ohmic, but there is rapid reblock by LFN that is not resolvable at this timescale.) Inset shows translocation progress on longer time scale. (C) The addition of 10 mM DTT to both sides of the bilayer restores both the conductance and gating properties of the channels. The recording is from the same bilayer as B and begins 185 s after the end of the inset in B. Break in the record is 155 s. Although not shown, the rate of LFN translocation is also restored after DTT exposure.