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. 2008 Aug 18;105(34):12134–12139. doi: 10.1073/pnas.0802105105

Fig. 2.

Fig. 2.

Electrical characteristics of p-channel OTFTs with a PVP-HDA insulator layer and a source-drain electrode geometry of W/L = 20. Output and transfer (Inset) characteristics of OTFTs with 40-nm thermally evaporated films of pentacene on OTS (A) and DDFTTF (B). The gate current is shown in dashed lines.