TABLE II.

Rate Constants Used for the Simulation Study

A	Voltage (mV)	kon (s−1)	koff (s−1)
	−60	33.5	14.8
	−80	36	11.5
	−100	40.5	8.9
	−120	45.7	6.9
	−140	50.7	5.4
	−160	56.3	3.9
B	[ATP] (μM)	[ATP] · kbind (s−1)	kunbind (s−1)
	0.03 Kd	33	1,100
	0.1 Kd	110	1,100
	0.3 Kd	330	1,100
	Kd	1,100	1,100
	3 Kd	3,300	1,100
	10 Kd	11,000	1,100
	30 Kd	33,000	1,100
	100 Kd	110,000	1,100
C	[ATP] (μM)	[ATP] · kbind (s−1)	kunbind (s−1)
	Kd	1,100	1,100
	Kd	110	110
	Kd	11	11
	Kd	1.1	1.1
D	[ATP]	voltage (mV)	[ATP] · kbind (s−1)	kunbind (s−1)	kon (s−1)	koff (s−1)
	Low	−60	10	1,000	100	10
			−160	100	1,000	100	10
	High	−60	100	1,000	100	10
			−160	1,000	1,000	100	10

Rate constants were calculated based on the model in Fig. 10 A. (A) Calculated rate constants for the gating step, K_on and K_off, in Fig. 10 B. These values were used for the simulation study depicted in Fig. 11 (A–C). (B) [ATP] relative to the Kd and rate constants for the ATP-binding step used in Fig. 11 (A and C). (C) [ATP] relative to the Kd and rate constants for the ATP-binding step used in Fig. 11 B. (D) Rate constants used in Fig. 11 D. Here, it was assumed that k_bind increases 10 times with the voltage change from −60 to −160 mV, whereas k_on and k_off are not voltage dependent.