Table 1. Summary of the diodes used in this study.

The silicon layer thicknesses were provided by the manufacturer for all diodes except the OSI and IRD devices; the thicknesses of these were experimentally determined (see Fig. 4 ▶).

Diode	Manufacturer	Model number	Thickness of silicon layer (µm)	Thickness of aluminium cover (µm)
1	OSI Optoelectronics	S100VL (solderable chip series)	400	23.2
2	OSI Optoelectronics	PIN-10DPI	400	16.4
3	OSI Optoelectronics	S4CL	400	N/A
4	IRD	AXUV100	300	N/A
5	Sintef	CHICSi 12	12	20
6	Hamamatsu	S9724-010	10	N/A
7	Hamamatsu	S3204-09	300	N/A
8	Canberra	PD300-500CB	500	N/A