Table 1.
Model, Å* | ΔE† | ΔH‡ | ΔS | TΔS | ΔG |
---|---|---|---|---|---|
2.4§ | 10.4 (6.8) | 9.1 (5.4) | 39 (42) | 11.7 (12.5) | −2.6 (7.1) |
2.8¶ | 8.9 (5.2) | 7.7 | 35 | 10.4 | −2.7 |
4.0¶ | 6.2 (1.9) | 5.5 | 20 | 6.0 | −0.2 |
*Oxidized Cu site model: [Cu(Im)2(SCH3)(S(CH3)2)]+.
†Total electronic energy change for loss of Met ligand.
‡ΔE with zero-point and thermal corrections included: H = Eelectronic + EZPE + Evib + Erot + Etrans + RT. ZPE = zero point energy. The results of PCM calculations are shown in the parentheses. ΔE, ΔH, TΔS, and ΔG are in kcal/mol, and ΔS is in cal/mol·K.
§The dCu–S(thioether) distance is obtained from full geometry optimization.
¶The dCu–S(thioether) distance is constrained as indicated.