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. 2009 May 20;96(10):3936–3948. doi: 10.1016/j.bpj.2009.01.059

Figure 6.

Figure 6

Simulation of the junction containing single homotypic GJ channel. The following parameters were identical for both hemichannels: Vh,o = 40 mV, γh,o = 200 pS, γh,res = 25 pS, and Ah = 0.05 mV−1. (A) Ij and gj traces of nonrectifying channel simulated at three Vj steps of −20, −60, and −100 mV. gj trace is an overlay of conductances calculated for all three voltage steps. (B) Ij and gj traces of the channel exhibiting γh,o and γh,res rectification with ϖo= 400 mV and ϖres = 200 mV. Ij trace shows single channels gating at Vj = −60 mV. The bottom gj trace shows overlay of conductances at Vj steps of −20, −60, and −100 mV.