. 2009 Jan 2;3(1):012001. doi: 10.1063/1.3056045

Figure 8.

Rectification of a nanoslit with asymmetric entrances. The left entrance is wider (w=2.3 mm) than the right (w=0.1 mm), as seen in the microscopic image (inset of (b)), and is obtained by intentional misalignment of the two Pyrex slides. The nanochannel height is h=200 nm and length is d=0.5 mm. (a)I-V measurements for varying ionic strengths and voltage bias (continuous line, anode at the right reservoir—reverse bias; dashed lines, anode at the left reservoir—forward bias); (b) the rectification factor defined as the ratio between the forward and reverse biases; (c) the depletion-enrichment phenomenon when the anode is at the right reservoir (enhanced online).