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. 2009 May 29;94(21):212106. doi: 10.1063/1.3147856

Figure 1.

Figure 1

Schematic energy band diagram for reverse (EG<0), neutral (EG=0), and forward (EG>0) biased (Zn,Al,Co)O-based FET device. Positive gate electric field increases electron concentration in the depletion layer (Zn,Co)O resulting in enhancement of the ferromagnetic interaction between Co ions, whereas negative gate voltage decreases the concentration and reduces the interaction.