Skip to main content
. Author manuscript; available in PMC: 2009 Sep 21.
Published in final edited form as: Nat Nanotechnol. 2008 Feb 10;3(3):163–167. doi: 10.1038/nnano.2008.4

Figure 2. Device characteristics for individual SWNTs connected with DNA.

Figure 2

a,b, Source–drain current versus VG at a constant source –drain voltage (50 mV) before cutting (black curve: 1), after cutting (red curve: 2) and after connection with the DNA sequence shown (green curve: 3), for a semiconducting SWNT device (a) and a metallic SWNT device (b). Guanine, G; cytosine, C; adenine, A; thymine, T.