Table 1.
Summary of the resistance values obtained before cutting and after reconnection.
| Before cutting |
After reconnection |
||||
|---|---|---|---|---|---|
| Carbon nanotube type | Effective resistance* (MΩ) | DNA sequence | Type of linkage† | Effective resistance* (MΩ) | DNA conductance (e2/h) |
| Semiconducting | 0.65 | Well matched | 5′ amine | 2.5 | 1.4 × 10−2 |
| Semiconducting | 1.3 | Well matched | 5′ amine | 2.8 | 1.7 × 10−2 |
| Semiconducting | 0.90 | CA mismatch | 5′ amine | 18 | 1.5 × 10−3 |
| Semiconducting | 0.48 | Well matched | 5′ & 3′ amine | 3.3 | 9.2 × 10−3 |
| Metallic | 0.23 | Well matched | 5′ & 3′ amine | 0.5 | 8.6 × 10−2 |
| Metallic | 0.23 | CA mismatch | 5′ & 3′ amine | 155.0 | 1.7 × 10−4 |
| Metallic | 0.23 | GT mismatch | 5′ & 3′ amine | 111.0 | 2.3 × 10−4 |
| Metallic | 0.20 | CA mismatch | 5′ & 3′ amine | 67 | 3.9 × 10−4 |
| Semiconducting | 0.24 | GT mismatch | 5′ & 3′ amine | 31 | 8.5 × 10−4 |
| Metallic | 0.52 | Well matched (Alu I) | 5′ & 3′ amine | 36 | 7.3 × 10−4 |
| Semiconducting | 1.5 | Single-stranded | 5′ & 3′ amine | 3.0 | 1.7 × 10−2 |
*
Resistance values were calculated using a gate bias of −4 V and a source–drain bias of −50 mV.
†
The 5′ amine linkage corresponds to a –OCONH–(CH)3 –NH2 linker on the 5′ ends of both strands. The 3′ and 5′ amine linkage corresponds to a –Pi –(CH2)3 –NH2 linker on both the 3′ and 5′ ends of one strand. See Supplementary Information, Figs S2 and S3 for the sequences used.