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. 2009 Oct 27;80(10):101101. doi: 10.1063/1.3236681

Figure 9.

Figure 9

Thermal oxide on silicon. When the oxide thickness is an eighth-wave, there is a π∕2 phase difference between the top and bottom reflections (reflection coefficient is purely imaginary). This establishes a quadrature condition that converts the phase load of a thin protein layer directly into intensity at the far-field detector.