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. Author manuscript; available in PMC: 2010 Dec 1.
Published in final edited form as: Nano Lett. 2009 Dec;9(12):4049–4052. doi: 10.1021/nl9022176

Figure 2.

Figure 2

Scanning electron microscopy (SEM) images showing results of experiments investigating Sn reflow in a plasma etcher. (a) A 50 nm thick Sn film evaporated on a silicon wafer prior to reflow. (b) The Sn film after exposure to an Ar plasma with a 10 sccm flow rate for 2 minutes; no reflow or significant change was observed. (c) The Sn film after exposure to a O2/CF4 plasma with a 3.6 and 12 sccm flow rate of O2 and CF4 respectively for 2 minutes_; significant reflow was observed. Scale bars: 200 nm.