Specifications for the five discrete photodiode, and two continuous photodiode array designs examined in this study. The following information is given for each array design: the design name; the type of photodiode structure; the pixel pitch, apix; the year of fabrication for the sample array examined; the type of substrate material; the width and length of the pixel addressing TFT (W and L, respectively); the pixel format; the data line capacitance, Cdata (determined through measurement or estimation); the data line capacitance per pixel, Cdlpix; the nominal optical fill factor, FFopt (as determined from pixel design dimensions and expressed in percent, and based on conventions described in the main text); and the geometric fill factor of the photodiode, FFgeo. Note that the substrate material for the first six arrays listed in the table is one of several types of glass (Corning: 7059, 1737F, or 1737G) while the PSI-1 array employs a quartz substrate (Shin-Etsu MicroSi: Viosil-SQ4W525WR). Also note that the pixel design for M10 corresponds to option 2 of Ref. 15, and the design for M13 corresponds to an updated version of option 3 of that reference.