Table 5.

TMAC in microchannels.

Authors	Gases	Walls(Roughness)	Temperature(K)	Kn	TMAC
1969 [88] Sreekanth	N2	brass	—	0.007–0.237	0.9317
1998 [161] Veijola et al.	air	Si(1 nm)	—	—	0.621–0.661
		Si(30 nm)			0.749–0.803
2001 [140] Arkilic et al.	Ar	Si(0.8 nm)	293	0.1–0.41	0.8 ± 0.1
	N2			0.1–0.34	0.83 ± 0.05
	CO2			0.1–0.44	0.88 ± 0.06
2001 [162,163] Sazhin et al.	He, Ne, Ar, Kr	Ag	—	> 100	0.71–0.92
		Ti			0.71–0.92
		Ti with O2 adsorbed			0.96–1.00
2003 [94] Maurer et al.	He	glass, Si	297-301	0.06–0.8	0.91 ± 0.03
	N2			0.002–0.59	0.87 ± 0.03
2003 [164] Jang et al.	air	glass, Si(35 nm)	298	0.00115(outlet)	0.204
2004 [141] Colin et al.	He, N2	glass, Si	294.2	0.029–0.22	0.93
				0.002–0.008	1
				0.005–0.03	0.93
				0.027–0.09	0.93
2004 [142] Hsieh et al.	N2	glass, Si(1.47 μm)	≈300	0.001–0.024 (outlet)	0.3–0.7
2004 [146] Copper et al.	Ar	carbon nanotubes	—	—	0.52±0.01
	N2
	O2
2006 [143] Jang and Wereley	air	glass (2.0 nm)	297	0.0017(outlet)	0.85
		Si(6.43 nm)
2007 [124] Ewart et al.	He	Si(25.2 nm)	—	0.009–0.309	0.914 ± 0.009
	Ar			0.003–0.302	0.871 ± 0.017
	N2			0.003–0.291	0.908 ± 0.041
2007 [144] Jang and Wereley	N2	glass(2.0 nm)	295.5	0.0137 (outlet)	0.96
		SiO2(6.8 nm)
2007 [145] Huang et al.	air	glass(0.07 μm)	—	0.018	0.90
2007 [147] Blanchard and Ligrani	He, air	Disk(10 nm)	301	0.0025–0.031	0.915, 0.885
		Disk(404 nm)			0.357, 0.346
		Disk(770 nm)			0.253, 0.145
2007 [165] Ewart et al.	He	Si(20 nm)	293.45–297.46	0.03–0.7	0.910 ± 0.004
2008 [166] Ewart et al.	He	Si(20 nm)	—	0.003–30	1.001 ± 0.019
	Ar				0.947 ± 0.010
	Xe				0.947 ± 0.015
	N2				0.954 ± 0.005