Figure 1.

SEM and TEM images show the evolution of silicon nanowire morphology from n-Si(100) with 0.008–0.02 Ω·cm resistivity in etchant solutions composed of 4.8 M HF and variable concentrations of H₂O₂ through a two-step reaction. (A) and (B): 0.1 M H₂O₂ for 30 min; (C) and (D): 0.1 M H₂O₂ for 60 min; (E) and (F): 0.15 M H₂O₂ for 30 min; (G) and (H): 0.15 M H₂O₂ for 60 min; (I) and (J): 0.2 M H₂O₂ for 30 min; (K) and (L): 0.2 M H₂O₂ for 60 min; (M) and (N): 0.3 M H₂O₂ for 30 min; and (O) and (P): 0.3 M H₂O₂ for 60 min. The scale bars for all SEM and TEM images is 10 µm and 60 nm, respectively.