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. 2010 Mar;135(3):217–227. doi: 10.1085/jgp.200910309

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© 2010 Tadross and Yue

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Figure 2. — J_EFF analysis applied to two Ca_V1.3 constructs with enhanced VDI (see our companion paper, Tadross et al., 2010), D1464P (left panels) and F116P (right panels). (A and C) VDI₃₀₀ parameters (see Fig. 2, A and B, of our companion paper [Tadross et al., 2010] for definition) plotted as a function of voltage (mV). Error bars show SEM. Number of cells (n) as indicated. (B and D) Close similarity of J_EFF (blue) and normalized P_O(V) (black), arguing for predominance of voltage inactivation from the open state. J_EFF is calculated from data in A and C according to Eq. 9, and P_O is the normalized open probability from our companion paper (Tadross et al., 2010), both plotted as a function of voltage (mV). Error bars represent the SEM, as estimated by transforming the mean ± SEM from A and C via Eq. 9.