. Author manuscript; available in PMC: 2010 Mar 1.

Published in final edited form as: Proc IEEE Inst Electr Electron Eng. 2009;97(3):513–552. doi: 10.1109/JPROC.2009.2013612

Table 3.

Example Design Matrix Showing Relationship of Parameters in Piezoresistive Cantilever Beam for Displacement Sensing [Trends Within the Ranges of Figs. 12, 15, 16 and 18 and (13) and (14)]. As the Controlled Design Parameter Increases (While Other Parameters Are Held at Typical Values and Input Displacement is Fixed), the Observed Parameters Respond as: Increasing (↑), Decreasing (↓), Weak or No Relation (-).

		Observed Parameters
		Power (W)	Volume (m³)	Bandwidth & ω_n (Hz)	Sheet resistance (Ω/square)	Sensitivity (V/m)	1/f Noise (V/√Hz)	Johnson Noise (V/√Hz)	Junction depth (m)	TCR (/°C)	TCS (/°C)
Controlled Parameters	↑ n (cm⁻³)	↑	-	-	↓	↓	↓	↓	-	^*	↓
	↑ V_b (V)	↑	-	-	-	↑	↑	-	-	-	-
	↑ Dt (m)	↑	↑	-	↓	↓	↓	↓	↑	-	-
	↑ t_p (m)	↑	↑	-	↓	↓	↓	↓	↑	-	-
	↑ w_p (m)	↑	↑	-	-	-	↓	↓	-	-	-
	↑ l_p (m)	↓	↑	-	-	↓	↓	↑	-	-	-
	↑ h (m)	-	↑	↑	-	↑	-	-	-	-	-
	↑ L (m)	-	↑	↓	-	↓	-	-	-	-	-
	↑ b (m)	-	↑	-	-	-	-	-	-	-	-

Note: Please See Fig. 15.

V_b, V_b, and D_t are the Dopant Concentration, Bias Voltage, and Diffusion Length, Respectively. t_p, w_p, and l_p are the Piezoresistor Thickness, Width, and Length, Respectively. h, b, and L are the Cantilever Beam Thickness, Width, and Length, Respectively