Skip to main content
. Author manuscript; available in PMC: 2011 Jan 5.
Published in final edited form as: J Phys Chem C Nanomater Interfaces. 2010 Jan 5;114(12):5565–5573. doi: 10.1021/jp9066179

Figure 1.

Figure 1

A C60 single beam depth profile of the tetraglyme layer on silicon. The analysis beam is C60+ (0.01pA, 10 keV, 25 × 25 μm2) and the etching beam is C60+ (1 nA, 10 keV, 500 × 500 μm2).