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. Author manuscript; available in PMC: 2011 Jan 5.
Published in final edited form as: J Phys Chem C Nanomater Interfaces. 2010 Jan 5;114(12):5565–5573. doi: 10.1021/jp9066179

Figure 3.

Figure 3

The normalized C2H5O+, C3H7O+ and Si+ signals during ToF-SIMS depth profiling of the tetraglyme layer for the C60+ single beam mode, as well as the Bi1+/C60+ and Bi3+/C60+ dual beam modes. The C60+ etching parameters were kept identical for all depth profiles.