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. Author manuscript; available in PMC: 2011 Jun 20.
Published in final edited form as: J Comput Phys. 2010 Jun 20;229(12):4431–4460. doi: 10.1016/j.jcp.2010.02.002

Figure 20.

Figure 20

Cross-section of potential profiles for the four-gate MOSFET obtained with (a) Continuum doping; (b) Discrete dopants (10).