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. 2010 May;135(5):415–431. doi: 10.1085/jgp.200910320

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© 2010 Lin et al.

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Figure 8. — Mg²⁺ shifts the voltage dependence of gating charge movement in I287D+F324D channels, but not in control (W434F) or I287D channels. Gating currents were recorded from (A) I287D+F324D, (B) W434F, or (C) I287D channels in the absence (left) or presence (middle) of Mg²⁺. From a holding potential of −90 mV, 60-ms (A), 40-ms (B), or 25-ms (C) test pulses to voltages between −120 and +18 mV were applied in 3-mV increments. Every third pulse is shown. (Right) ON gating currents recorded in the absence (■) or presence (○) of Mg²⁺ were integrated to obtain the gating charge (Q), which was normalized to the maximum charge obtained in the experiment, and plotted versus voltage. Data were fitted with the sum of two Boltzmann functions to obtain values for V_1/2 and apparent valence (z) for the q1 and q2 components of gating charge. Fitted parameters are provided in Table I.