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. 2009 Dec 22;11(2):283–296. doi: 10.1007/s10162-009-0199-2

TABLE 1.

The electrophysiological parameters of the ANF model

Parameter Value     Reference
Node of Ranvier
Resistance, Rm 166.2 kΩ mm2 Mino et al. 2004
Capacitance, Cm 0.5125 nF/mm2 Mino et al. 2004
Internode Tasaki 1955
Resistance, rm Inline graphica Mino et al. 2004; Cartee 2006
Capacitance, cm Inline graphic
Na channel Matsuoka et al. 2001
Nernst potential, ENa 66 mV
Density, ρNa 80/μm2b Mino et al. 2004
Conductance, γNa 22.65 pS
K channel
Nernst potential, EK −88 mV
Density, ρK 45/μm2b
Conductance, γK 50.0 pS
Na+ gating kineticsc A B C Schwarz and Eikhof 1987
αm 1.872 25.41 6.06
βm −3.793 21.001 9.41 Matsuoka et al. 2001
αh −0.549 −27.74 9.06
βh 22.57 56 12.5
K+ gating kineticsc
αn 0.129 35 10
βn −0.324 35 10
Axoplasmic resistance, Ra 6378 Ω mm Mino et al. 2004
Resting potential, Erest −78 mV Neumcke and Stämpfli 1982
Extracellular resistivity, ρe 0.3 kΩ cm McNeal 1976

aε0 is the permittivity of free space (8.854 × 10−12 F/m), εl is the myelin dielectric constant (1.27), lε is the length of compartment one of the nine sub-units of the internode, D is the outer myelinated fiber diameter, d is the unmyelinated (inner) fiber diameter, and ρm is the internodal resistivity (29.26 GΩ mm)

bModified from ρNa = 27/μm2 and ρNa = 10.6/μm2 for producing absolute refractory period = 0.41 ms

cInline graphic.