FIGURE 5.

Bs-FtsZ polymers induced by PC fragments in Mes50 assembly buffer with 10 mm MgCl₂ and 2 mm GTP. A, 1 mm fragment of DFMBA. B, 1 mm fragment of analogue CTPM (similar to control without fragment, as in Fig. 1F). Bar, 200 nm. C, chemical structure of PC and low speed FtsZ polymers pelleting (15,000 × g, 20 min) under the same conditions (PC, 20 μm). DFMBA also induced a FtsZ light scattering increase that was not observed with CTPM. The Cr for assembly in Hepes50 was reduced from ∼5 μm to ∼1 μm FtsZ with DFMBA (4 mm).