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. Author manuscript; available in PMC: 2011 Aug 1.
Published in final edited form as: Bioelectrochemistry. 2009 Dec 24;79(1):95–100. doi: 10.1016/j.bioelechem.2009.12.007

Fig. 1.

Fig. 1

Restoration of plasma membrane electrical resistance (Rm) by Gd3+ in nsEP-exposed Jurkat cells (one 60 ns pulse at 8 kV/cm). (A) Example of Rm changes in response to nsEP (at 30 s) followed by perfusion with 1 μM of Gd3+ (at 80 s). Insets show representative I–V curves at different times. (B) Restoration of Rm by Gd3+ in nsEP-treated cells as a function of Gd3+ concentration. Shown are Rm values that were measured 30 s before nsEP exposure, 30 s after it, and after 50 s of perfusion with Gd3+. The data have been normalized to pre-exposure Rm in individual cells. Shown are mean values ± s.e. (n= 3–4).