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. Author manuscript; available in PMC: 2010 Jun 3.
Published in final edited form as: J Vac Sci Technol B Microelectron Nanometer Struct Process Meas Phenom. 2008 Nov 1;26(6):2549–2553. doi: 10.1116/1.3013424

Figure 2.

Figure 2

SEM image of double height holes in silicon substrate after fabrication of the step height and before removing of the oxide. The thickness of the deposited oxide is 2 µm. The deposition thickness is chosen such that the resulting film protects the holes from further fabrication process.