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. 2010 Apr 19;107(19):8513–8518. doi: 10.1073/pnas.1003052107

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Fig. 2. — Formation energy, E^f, as a function of Fermi level, ε_F. E^f was calculated for various defects in (A) diamond and (B) 4H-SiC (in C-rich conditions). The shaded areas show the range of stability of NV^-1 in diamond, and (Blue), (Green), and (Purple) in SiC.

Inline graphic — Formation energy, E^f, as a function of Fermi level, ε_F. E^f was calculated for various defects in (A) diamond and (B) 4H-SiC (in C-rich conditions). The shaded areas show the range of stability of NV^-1 in diamond, and (Blue), (Green), and (Purple) in SiC.