Fig. 4.

Fabricating NW devices by using the MTP method. (A) Illustration of the steps for the MTP method (1st column: Pressing down a thermal release tape to the prefabricated electrodes → Peel off the thermal release tape with electrodes → Pressing down the thermal release tape/electrodes to a target substrate → The thermal release tape is thermally released at 90 °C; 2nd column: NWs on the growth substrate → HF etching to remove the native SiO₂ of NWs → Pressing down a tape to the NWs → Peel off the tape with NW mesh → Assembling of the tape/NWs and the transferred electrodes). (B) Photographs of NW mesh devices fabricated by the MTP method on the nonadhesive side of an insulation tape (Left) and a Petri dish (Right). (C) The I–V curves of the p-type Si NW mesh devices fabricated on the insulation tape (Left) and the Petri dish (Right) are both linear.