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. 2009 Mar 26;4(7):674–679. doi: 10.1007/s11671-009-9293-y

Table 1.

Photocurrent–voltage characteristics of composite devices with MEH-PPV:C60 (+ZnCdTe) as the active layer, along with the undoped MEH-PPV:C60 (D1–0) device in comparison of the composite devices with different ZnCdTe:[MEH-PPV + C60] weight ratios of 10 wt% (D1–1), 20 wt% (D1–2), 40 wt% (D1–3), and 70 wt% (D1–4)

  D1–0 D1–1 D1–2 D1–3 D1–4
Jsc(μA/cm2) 57.1 87.0 101.6 148.7 21.2
Voc(V) 0.74 0.74 0.81 0.84 0.51
FF 0.23 0.22 0.18 0.18 0.12
Pmax(μW/cm2) 10.04 14.09 14.30 21.91 1.35
η (%) 0.060 0.084 0.086 0.13 0.0081

Vocopen-circuit voltage,Jscshort-circuit current density (under λ = 500 nm with the light intensity of 16.7 mW/cm2),FFfill factor,Pmaxthe maximum output power, and η the power conversion efficiency