Figure 1.
a Schematic 3D illustration of n-ZnO NTs/p-GaN heterostructures LED device b I–V characteristics of the ZnO NTs–based light-emitting diode with threshold voltage ~5 V
Official websites use .gov
A
.gov website belongs to an official
government organization in the United States.
Secure .gov websites use HTTPS
A lock (
) or https:// means you've safely
connected to the .gov website. Share sensitive
information only on official, secure websites.