. 2008 Oct 25;3(12):502–507. doi: 10.1007/s11671-008-9187-4

Table 1.

Summary of device parameters for the photovoltaic devices using pristine MEH-PPV, MEH-PPV:Cu₂S, MEH-PPV:In₂S₃, and MEH-PPV:Cu₂S–In₂S₃as active layers under illumination

Active layer	I_sc(μA cm⁻²)	V_oc(V)	FF	η (%)
Pristine MEH-PPV	7.82	1.04	0.251	0.015
Cu₂S:MEH-PPV	39.7	0.59	0.214	0.03
In₂S₃:MEH-PPV	15.5	0.87	0.239	0.02
Cu₂S–In₂S₃:MEH-PPV	76.9	0.72	0.295	0.10