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. Author manuscript; available in PMC: 2010 Sep 23.
Published in final edited form as: Sci Signal. 2010 Mar 23;3(114):ra22. doi: 10.1126/scisignal.2000818

Fig. 3. Effect of FAD PS on InsP3R gating in human FAD B lymphoblasts.

Fig. 3

(A) Representative InsP3R currents (+20 mV) in nuclei isolated from human FAD B lymphoblasts and control lymphoblasts from age-matched individuals without FAD activated with 10 µM InsP3 and 1 µM Ca2+ in pipette solution. Summary of channel Po (B), τo (open circles) and τc (filled circles) (C) and modal gating analysis (D). Asterisks: p < 0.05, ANOVA compared with CTL1. (E) Modal gating analyses. Each section shows continuous recording with gating mode assignment in color code below. In cells from normal individuals, low Po is associated with switching between L and I modes. In cells from all three individuals with FAD, enhanced gating is manifested by increased occupancy of H mode at expense of L mode. F-H. Single InsP3R channel current traces from human B cells activated by sub-optimal InsP3. (F) Representative currents (+20 mV) in isolated nuclei from human FAD lymphoblasts and age-matched control B lymphoblastss activated by sub-optimal 100 nM InsP3 and 1 µM Ca2+. Summary of InsP3R Po (G), and τo (open circle) and τc (filled circle) (H) from aged-matched control and FAD human B-lymphocblasts. Asterisks: p < 0.05 by student’s t-test.