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. Author manuscript; available in PMC: 2010 Jul 7.
Published in final edited form as: Anal Chem. 2008 Aug 7;80(17):6610–6619. doi: 10.1021/ac8008143

Figure 3.

Figure 3

Conditional resolving powers, Rc, calculated for drift potentials from 0 to 5000 V and for initial gate pulse widths from 100 to 500 μs for the RIP (a). The results demonstrate that there is an optimal voltage for each initial width used for the RIP. Contrary to that predicted by the diffusion limited resolving power equation, resolving power does not continue to increase with higher voltages. Measured resolving power, Rm, as a function of drift voltage obtained from IMS spectra for the RIP (b). The data demonstrate that decreasing the gate width increases resolving power and that increasing the drift voltage produces a resolving power maximum at each gate pulse width for the RIP. Note the points at which the response ion disappeared into the background for Rm.