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. Author manuscript; available in PMC: 2010 Jul 7.

Published in final edited form as: Anal Chem. 2008 Aug 7;80(17):6610–6619. doi: 10.1021/ac8008143

Conditional resolving powers, R_c, calculated for drift potentials from 0 to 5,000 V and for initial gate pulse widths from 100 to 500 μs for the product ion peak for (a) MTBE; and (b) MIBK. These results demonstrate that there is an optimal voltage for each initial width used and for each compound. Contrary to that predicted by the diffusion limited resolving power equation, resolving power does not continue to increase with higher voltages. Measured resolving power, R_m, as a function of drift voltage obtained from IMS spectra for the product ion peaks for (c) MTBE, and (d) MIBK. These data demonstrate that decreasing the gate width increases resolving power and the voltage limit of detection, and that increasing the drift voltage produces a resolving power maximum which is unique for each compound. Note the points in (c) and (d) at which the response ions disappeared into the background.

Conditional resolving powers, R_c, calculated for drift potentials from 0 to 5,000 V and for initial gate pulse widths from 100 to 500 μs for the product ion peak for (a) MTBE; and (b) MIBK. These results demonstrate that there is an optimal voltage for each initial width used and for each compound. Contrary to that predicted by the diffusion limited resolving power equation, resolving power does not continue to increase with higher voltages. Measured resolving power, R_m, as a function of drift voltage obtained from IMS spectra for the product ion peaks for (c) MTBE, and (d) MIBK. These data demonstrate that decreasing the gate width increases resolving power and the voltage limit of detection, and that increasing the drift voltage produces a resolving power maximum which is unique for each compound. Note the points in (c) and (d) at which the response ions disappeared into the background.