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. 2010 Jun 8;5(9):1456–1463. doi: 10.1007/s11671-010-9661-7

Figure 6.

Figure 6

The HRTEM images of the a as-grown SiGe film and b SiGe film annealed at 900°C for 30 min. The results clearly indicate the degradation of crystalline structure resulted from the ATG instability-induced surface roughening driven by strain relaxation