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. Author manuscript; available in PMC: 2011 Mar 1.
Published in final edited form as: Nat Nanotechnol. 2010 Aug 8;5(9):655–659. doi: 10.1038/nnano.2010.154

Figure 2. Electrical transport measurement of a graphene nanoribbon-FET with width of ~15 nm and length of 800nm.

Figure 2

a, Differential conductance versus gate voltage with a magnetic field of 0 T (black) and 8 T (red) normal to the device plane. The measurements were carried out at 1.6 K. b-d, Differential conductance as a function of source-drain bias and back-gate voltage under magnetic field of 0 T (b), 2 T (c), and 8 T (d). These measurements show diamonds of suppressed conductance shrunk both in source-drain bias and gate voltage direction with increasing magnetic field.